Accurate MOS Device Hot Carrier Models for VLSI Reliability Simulation - Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995

This paper describes a Spicexompatible circuit reliability simulation model of submicron LDD MOS devices. It incorporates an accurate hot carrier model of the degraded MOSFEX characteristics under long term operations, which includes a drain current model and a substrate current model. The drain current reduction is modeled as mobility degradation due to interface states enhanced scattering. The substrate current model is developed based on a new effective electric field concept which shows a significant improvement to the conventional local field model. By characterizing the time-dependent of the device parameters, hot carrier I-V model can be obtained. Comparison of the modeled results with those of experimental shows excellent match for a wide range of device channel length, bias conditions and stress time. Moreover, the reliability simulator that we developed allows prediction of lifetime or aging of a device or circuit in VLSI design.